DSAEDA00068348.pdf by Sumitomo Electric

Partial File Text EGN26C070I2D High Voltage - High Power GaN-HEMT FEATURES High Voltage Operation : VDS=50V High Power : 48.8dBm (typ.) @ Psat High Efficiency: 70%(typ.) @ Psat Power Gain : 18dB(typ.) @ f=2.6GHz
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
Price & Stock
Powered by Findchips

DSAEDA00068348.pdf preview

Download Datasheet