DSA00201830.pdf by NEC

Partial File Text ULTRA LOW NOISE PSEUDOMORPHIC HJ FET NE32984D NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY VDS = 2 V, IDS = 10 mA FEATURES 1.2 · HIGH ASSOCIATED GAIN: 12.5 dB Typical at 12 GHz 24
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IS21S low noise, hetero junction fet NE32984D NE32984D-S NE32984D-T1