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    DSA00333391.pdf by Hitachi Semiconductor

    • 2SK3380 Silicon N Channel MOS FET High Speed Switching ADE-208-806 (Z) 1st.Edition. June 1999 Features ยท Low on-resistance R DS =1.26 typ. (V GS = 10 V , ID = 150 mA) R DS = 2.8 typ. (VGS
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