DSA00334708.pdf by Hitachi Semiconductor

Partial File Text 2SJ588 Silicon P Channel MOS FET High Speed Switching ADE-208-802 (Z) 1st.Edition. June 1999 Features · Low on-resistance R DS =2.8 typ. (V GS = -10 V , I D = -50 mA) R DS =5.7 typ. (V GS
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