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    • Silicon Transistor 2SC3616 NPNXt^ + i/Z;^ *J b =7>i> 9 NPN Silicon Epitaxial Transistor High Gain Amplifier W*/FEATURES hFE = 800~3200 @Vce = 2.0 V, Ic = 300 mA OfiVCE(sat)T'to VCE(sat)=0.14 V TYP. @
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    2SC3616
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