ScansUX8814.pdf
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Silicon Transistor
2SC3616
NPNXt^ + i/Z;^ *J b =7>i> 9
NPN Silicon Epitaxial Transistor High Gain Amplifier
W*/FEATURES
hFE = 800~3200 @Vce = 2.0 V, Ic = 300 mA
OfiVCE(sat)T'to
VCE(sat)=0.14 V TYP. @
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