DSA00336110.pdf by Hitachi Semiconductor

Partial File Text 3SK318 Silicon N-Channel Dual Gate MOS FET UHF RF Amplifier ADE-208-600(Z) 1st. Edition February 1998 Features · Low noise characteristics; (NF= 1.4 dB typ. at f= 900 MHz) · Excellent cross
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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3SK318 dual-gate YB SC-82AB

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