DSAZIHA1000279563.pdf by Cree

Partial File Text PRELIMINARY CGHV22200 200 W, 1800-2200 MHz, GaN HEMT for LTE Creeâs CGHV22200 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high effic
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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