DSAISS00097598.pdf by Toshiba

Partial File Text GT10G131 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT10G131 Strobe Flash Applications Unit: mm â¢ 5th generation (trench gate structure) IGBT â¢ Enhance
Datasheet Type Original
RoHS Unknown
Pb Free Yes
Lifecycle End Of Life
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