DSA0070304.pdf by Toshiba

Partial File Text TOSHIBA TIM1414-10LA MICROWAVE POWER GaAs FET Features · Low intermodulation distortion - IM3 = -45 dBc at Po = 29.0 dBm, Single Carrier Level · High power - P1dB = 40.5 dBm at 14.0 GHz to 14
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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