DSAZSAA00022614.pdf by TY Semiconductor

Partial File Text Product specification 2SB1386 Features Low VCE(sat). VCE(sat) = -0.35V (Typ.) (IC/IB = -4A / -0.1A) Excellent DC current gain Epitaxial planar type PNP silicon transistor Absolute Maxim
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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