DSAH00672943.pdf
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Toshiba
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2SB1481
TOSHIBA Transistor Silicon PNP Epitaxial Type
2SB1481
Switching Applications
Unit: mm · · · High DC current gain: hFE = 2000 (min) (VCE = -2 V, IC = -1.5 A) Low saturation voltage: VCE (
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Original
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