DSAH00673281.pdf by Toshiba

Partial File Text 2SB1557 TOSHIBA Transistor Silicon PNP Epitaxial Type (Darlington Power Transistor) 2SB1557 Power Amplifier Applications Unit: mm · · High breakdown voltage: VCEO = -140 V (min) Complementary to
Datasheet Type Original
RoHS No
Pb Free No
Lifecycle Active
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