DSASW00351082.pdf

Manufacturer Panasonic
Partial File Text Power F-MOS FETs 2SK2960 Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed: EAS > 250mJ q VGSS = ±30V guaranteed q High-speed switching: tf = 55ns q No secon
Datasheet Type Original
ECAD Model
Part Details Part pricing, stock, data attributes from Findchips.com

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