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    DSAZIHA100056509.pdf

    • American Microsemiconductor
    • 2N3666 Transistors Si NPN Power BJT Military/High-RelN V(BR)CEO (V)80 V(BR)CBO (V)120 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)5.0 Maximum Operating Temp (øC)175þ I(CBO) Max. (A)50nØ
    • Original

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