DSA00280482.pdf by RF Micro Devices

Partial File Text FPD2250 FPD22501.5W Power pHEMT 1.5W POWER pHEMT Package Style: Bare Die Product Description Features The FPD2250 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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FPD2250 InP transistor HEMT MIL-HDBK-263 pseudomorphic HEMT