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    DSAZIHA100057454.pdf by American Microsemiconductor

    • MJD243-1 Transistors Si NPN Power BJT Military/High-RelN V(BR)CEO (V)100 V(BR)CBO (V)100 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)1.4 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100n
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