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DSA0085373.pdf
by Fairchild Semiconductor
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FQB25N33TM_F085 330V N-Channel MOSFET tm Features General Description ยท 25A, 330V, RDS(on) = 0.23 @VGS = 10V These N-Channel enhancement mode power field effect transistors are produc
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FQB25N33
FQB25N33TM-F085