DSA00588069.pdf by Renesas Electronics

Partial File Text Preliminary Datasheet RJL5013DPE Silicon N Channel MOS FET High Speed Power Switching Features · Built-in fast recovery diode · Low on-resistance RDS(on) = 0.42 typ. (at ID = 7 A, VGS = 10 V, T
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RoHS Unknown
Pb Free Unknown
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