DSA00588983.pdf by Renesas Electronics

Partial File Text Preliminary Datasheet RJL6013DPE Silicon N Channel MOS FET High Speed Power Switching Features Built-in fast recovery diode Low on-resistance RDS(on) = 0.66 typ. (at ID = 5.5 A, VGS = 10 V, T
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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