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TC58NYG2S3EBAI5
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
4 GBIT (512M × 8 BIT) CMOS NAND E PROM DESCRIPTION
The TC58NYG2S3E is a single 1.8V 4 Gbit (4,429,185,024 bits) NAND Elect
