DSAFRAZ0023934.pdf by Toshiba

Partial File Text 2SC2669 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type (PCT process) 2SC2669 High Frequency Amplifier Applications Unit: mm · High power gain: Gpe = 30dB (typ.) (f = 10.7 MHz) ·
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
Price & Stock
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2SC2669 2SC2669-O 2SC2669-R 2SC2669-Y