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    DSAFRAZ0024172.pdf by Toshiba

    • JDV2S10S TOSHIBA DIODE Silicon Epitaxial Planar Type JDV2S10S VCO for UHF Band Radio Uni... t: mm · High Capacitance Ratio : C0.5V/C2.5V = 2.5 (typ.) · Low Series Resistance : rs = 0.3 more
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    JDV2S10S

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