DSAZIHA100059988.pdf
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American Microsemiconductor
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1001PGB200E Thyristors
Gate Turn Off Thyristor (GTO)
V(DRM) Max. (V)2.0k
V(RRM) Max. (V)18
I(T) Rated Maximum (A)550²
@Temp. (øC) (Test Condition)
I(TSM) Max. (A)6.5k
@ t(w) (s) (Test Conditi
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