DSAZIHA100060009.pdf
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American Microsemiconductor
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241UF Thyristors
Gate Turn Off Thyristor (GTO)
V(DRM) Max. (V)300
V(RRM) Max. (V)
I(T) Rated Maximum (A)5.0
@Temp. (øC) (Test Condition)25#
I(TSM) Max. (A)30
@ t(w) (s) (Test Condition)
I(GT)
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Original
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