DSA00600619.pdf by Renesas Technology

Partial File Text Preliminary RJK03C1DPB Silicon N Channel Power MOS FET with Schottky Barrier Diode REJ03G1830-0310 Power Switching Rev.3.10 Sep 29, 2009 Features High speed switching Capable of 4.5 V gate dr
Datasheet Type Original
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Pb Free Unknown
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