DSA0097726.pdf by Infineon Technologies

Partial File Text IPB025N08N3 G OptiMOSTM3 Power-Transistor Product Summary Features V DS 80 V · N-channel, normal level R DS(on),max 2.5 m · Excellent gate charge x R DS(on) product (F
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025N08N IEC61249-2-21 IPB025N08N3 IPB02CN08N