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    • International Rectifier
    • PD -96294 IRFH5110PbF HEXFET® Power MOSFET VDS 100 V 12.4 m nC RG (typical) 48 1.5 ID 63 A RDS(on) max (@VGS = 10V) Qg (typical) (@Tc(Bottom) = 25°C)
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    DSA00101580.pdf preview Download Datasheet

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    AN-1154 IRFH5110 IRFH5110TR2PBF IRFH5110TRPBF

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