DSA00101580.pdf
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International Rectifier
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PD -96294
IRFH5110PbF
HEXFET® Power MOSFET
VDS
100
V
12.4
m
nC
RG (typical)
48
1.5
ID
63
A
RDS(on) max
(@VGS = 10V)
Qg (typical)
(@Tc(Bottom) = 25°C)
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Original
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