DSA00299952.pdf by Central Semiconductor

Partial File Text PROCESS CP630 Power Transistor PNP - Silicon Darlington Transistor Chip PROCESS DETAILS Process EPITAXIAL BASE Die Size 80 X 80 MILS Die Thickness 8 MILS Base Bonding Pad
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown

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"Darlington Transistor" CJD127 CP630 CZT127

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