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    DSAIH00083572.pdf

    • Cree
    • PRELIMINARY CGH40010 10 W, RF Power GaN HEMT Cree’s CGH40010 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40010, operating from a 28 volt rail, offers
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    DSAIH00083572.pdf preview Download Datasheet

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