DSAIH00083941.pdf by Cree

Partial File Text CGHV22100 100 W, 1800-2200 MHz, GaN HEMT for LTE Creeâs CGHV22100 is a gallium nitride (GaN) high electron mobility transistor (HEMT) is designed specifically for high efficiency, high
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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