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DSAIH00083943.pdf
by Cree
Partial File Text
CGHV27100 100 W, 2500-2700 MHz, 50 V, GaN HEMT for LTE Creeâs CGHV27100 is a gall
...
ium nitride (GaN) high electron mobility transistor (HEMT) is designed specifically for high efficiency,
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Datasheet Type
Original
RoHS
Unknown
Pb Free
Unknown
Lifecycle
Unknown
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