DSAIH00083943.pdf by Cree

Partial File Text CGHV27100 100 W, 2500-2700 MHz, 50 V, GaN HEMT for LTE Creeâs CGHV27100 is a gallium nitride (GaN) high electron mobility transistor (HEMT) is designed specifically for high efficiency,
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
Price & Stock Find it at Findchips.com

DSAIH00083943.pdf preview Download Datasheet