DSAIH00084681.pdf by Central Semiconductor

Partial File Text PROCESS CP761R Small Signal MOSFET P-Channel Enhancement-Mode MOSFET Chip PROCESS DETAILS Die Size 14.2 x 14.2 MILS Die Thickness 3.9 MILS Gate Bonding Pad Area 3.94 x 3.94
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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