DSAHI000132118.pdf by Toshiba

Partial File Text TC58NYG1S3EBAI4 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 GBIT (256M × 8 BIT) CMOS NAND E PROM DESCRIPTION The TC58NYG1S3E is a single 1.8V 2 Gbit (2,214,592,512 bits) NAND Elect
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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P-TFBGA63-0911-0 TC58NYG1S3EBAI4