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    Scans-00142989.pdf

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    • IRF820/821/822/823 N-CHANNEL POWER MOSFETS FEATURES • Lower Rds (on) • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input c
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    Diode IRF820 IRF420 IRF421 IRF422 IRF423 IRF820 IRF820 SAMSUNG irf821 IRF822 IRF823 ON 823 samsung 822

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