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Partial File Text SGS-THOMSON ·LieîWWÊ® BUZ11 CHIP N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM DIE SIZE: METALLIZATION: Top Back BACKSIDE THICKNESS: DIE THICKNESS: PASSIVATION: BONDING PAD S
Datasheet Type Scan
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown

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transistor C 639 W

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