DSAXX002368.pdf
by HT Wang
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AO3407
30V P-Channel Enhancement Mode MOSFET
VDS= -30V
RDS(ON), Vgs@-10V, Ids@ 4.1A < 64.5m
RDS(ON), Vgs@-4.5V, Ids@-3.0A < 87m
Features
Advanced trench process technology
High Density Cell
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Original
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Unknown
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Unknown
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