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    DSAXX002368.pdf by HT Wang

    • AO3407 30V P-Channel Enhancement Mode MOSFET VDS= -30V RDS(ON), Vgs@-10V, Ids@ 4.1A < 64.5m RDS(ON), Vgs@-4.5V, Ids@-3.0A < 87m Features Advanced trench process technology High Density Cell
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    87m diode AO3407
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