DSAXX002368.pdf by HT Wang

Partial File Text AO3407 30V P-Channel Enhancement Mode MOSFET VDS= -30V RDS(ON), Vgs@-10V, Ids@ 4.1A < 64.5m RDS(ON), Vgs@-4.5V, Ids@-3.0A < 87m Features Advanced trench process technology High Density Cell
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown

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87m diode AO3407