DSAXX003143.pdf by HT Wang

Partial File Text SI2301 20V P-Channel Enhancement Mode MOSFET VDS= -20V RDS(ON), Vgs@-4.5V, Ids@-2.8A RDS(ON), Vgs@-2.5V, Ids@-2.0A 130m 190m Features Advanced trench process technology High Density Cel
Datasheet Type Original
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Pb Free Unknown
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