DSA00128609.pdf by Fujitsu

Partial File Text FLC087XP GaAs FET & HEMT Chips FEATURES · · · · High Output Power: P1dB = 28.5dBm(Typ.) High Gain: G1dB = 7.0dB(Typ.) High PAE: add = 31.5%(Typ.) Proven Reliability Drain DESCRIPTION
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
Price & Stock
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FLC087XP FUJITSU RF 053 GaAs FET HEMT Chips