DSA00128660.pdf by Fujitsu

Partial File Text FLK107XV GaAs FET & HEMT Chips FEATURES · · · · High Output Power: P1dB = 30.0dBm(Typ.) High Gain: G1dB = 6.5dB(Typ.) High PAE: add = 31%(Typ.) Proven Reliability Drain Drain Drai
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Obsolete
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