DSA00128688.pdf by Fujitsu

Partial File Text FHX13X, FHX14X GaAs FET & HEMT Chips FEATURES · · · · Low Noise Figure: 0.45dB (Typ.)@f=12GHz (FHX13) High Associated Gain: 13.0dB (Typ.)@f=12GHz Lg 0.15µm, Wg = 200µm Gold Gate Metalliza
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Obsolete
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FHX13 FHX13X FHX14X fujitsu hemt RF POWER TRANSISTOR C 10-12 GHZ chip

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