DSA00128703.pdf by Fujitsu

Partial File Text FHX45X GaAs FET & HEMT Chips FEATURES · · · · Low Noise Figure: 0.55dB (Typ.)@f=12GHz High Associated Gain: 12.0dB (Typ.)@f=12GHz Lg 0.15µm, Wg = 280µm Gold Gate Metallization for High Re
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FHX45X fujitsu hemt GaAs FET HEMT Chips high power FET transistor s-parameters TM 1628