DSA00128773.pdf
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Fujitsu
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FLC317MG-4
C-Band Power GaAs FET
FEATURES
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High Output Power: P1dB = 34.8dBm(Typ.)
High Gain: G1dB = 9.5dB(Typ.)
High PAE: add = 37%(Typ.)
Proven Reliability
Hermetic Metal/Cera
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Original
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