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DSA00128809.pdf
by Fujitsu
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FLM7785-6F C-Band Internally Matched FET FEATURES · · · · · · · High Output Power: P1dB = 38.5dBm (Typ.) High Gain: G1dB = 8.5dB (Typ.) High PAE: add = 31% (Typ.) Low IM3 = -46dBc@Po =
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