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DSA00471219.pdf
Manufacturer
Toshiba
Partial File Text
GT40M101 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT GT40M101 Unit: mm HIGH POWER SWITCHING APPLICATIONS High input impedance High speed Low saturation voltage : tf
Datasheet Type
Original
ECAD Model
Part Details
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GT40M101
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