DSA00261322.pdf by Fujitsu
- FLU35XM L-Band Medium & High Power GaAs FET FEATURES · High Output Power: P1dB=35.5dBm (Typ.) · High Gain: G1dB=12.5dB (Typ.) · High PAE: hadd=46% (Typ.) · Hermetic Metal/Ceramic (SMT) Package · Ta
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- Transferred
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