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    • SIEMENS GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter LD 242 0 0 .4 5 2 .7 ยท p * Chip position Anode (LD 2 4 2 , BPX 6 3 , SFH 483) 464) Cathode (S FH A p p ro x. w eight 0 .5 g
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